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| http://www.sanken-ele.co.jp SANKEN ELECTRIC FMEN-230A High Voltage Schottky Barrier Rectifier Mar. 2008 General Description FMEN-230A is a High Voltage (100V) Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Package TO220F(3Pin) Applications DC-DC converters AC adapter High frequency rectification circuit Key Specifications Features High Voltage 100Vguarantee Steady operation is possible even at the high temperature by the low leakage current. Super-high speed & low noise switching. Low forward voltage drop. Symbol VRM VF IF(AV) Unit V V A Rating 100 0.85 30 IF=15A Conditions Typical Characteristics FMEN-230A IF-VF Characteristics 100 1.0E-01 FMEN-230A VR-IR Characteristics 150C 10 1.0E-02 125C 100C 1 1.0E-03 150C 0.1 IR (A) 1.0E-04 IF (A) 125C 0.01 100C 25C 1.0E-05 25C 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VF (V) 1.1 1.2 1.0E-06 0 20 40 VR (V) 60 80 100 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 1 http://www.sanken-ele.co.jp SANKEN ELECTRIC FMEN-230A High Voltage Schottky Barrier Rectifier Mar. 2008 Absolute maximum ratings No. 1 2 3 4 5 6 7 Parameter Transient Peak Reverse Voltage Peak Reverse Voltage Average Forward Current Peak Surge Forward Current I2t Limiting Value Junction Temperature Storage Temperature Symbol Unit Rating Conditions VRSM VRM IF(AV) IFSM I2t Tj Tstg V V A A A2s C C 100 100 30 150 112.5 -40 to +150 -40 to +150 Half sinewave, one shot 1msec Electrical characteristics (Ta=25C, unless otherwise specified) No. 1 2 3 4 Parameter Symbol Unit Rating Conditions Forward Voltage Drop Reverse Leakage Current Reverse Leakage Current VF IR H*IR Rth(j-c) V uA mA C/W 0.85 max. 300 max. 150 max. 4.0 max. IF=15A VR=VRM VR=VRM, Tj=150C Between Junction and case Under High Temperature Thermal Resistance No.1, 2&3 show characteristics per one chip. The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 2 http://www.sanken-ele.co.jp SANKEN ELECTRIC FMEN-230A High Voltage Schottky Barrier Rectifier Mar. 2008 Characteristics Forward Power Dissipation Forward Power Dissipation PF (W) 35 30 t Tj=150 25 20 15 T t/T=1/6 t/T=1/3,sinewave t/T=1/2 10 5 0 0 10 20 30 DC Average Forward Current IF(AV) (A) Reverse Power Dissipation Reverse Power Dissipation PR (W) 25 Tj=150 t T 20 1-t/T=5/6 15 1-t/T=2/3 10 1-t/T=1/2 5 sinewave 0 0 20 40 60 80 100 Reverse Voltage VR (V) Current Derating Average Forward Current IF(AV) (A) 30 VR=150V Tj=150 t T sinewave 20 t/T=1/2 t/T=1/3 10 DC t/T=1/6 0 0 Case temperature Tc (C) 50 100 150 Copy Right: SANKEN ELECTRIC CO.,LTD. Page 3 http://www.sanken-ele.co.jp SANKEN ELECTRIC FMEN-230A High Voltage Schottky Barrier Rectifier Mar. 2008 Outline drawings, mm tolerance:0.2 Connection Diagram 1 2 3 Copy Right: SANKEN ELECTRIC CO.,LTD. Page 4 |
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